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DGT409BCA

Features: Reverse Blocking CapabilityDouble Side CoolingHigh Reliability In ServiceHigh Voltage CapabilityFault Protection Without FusesTurn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental RequirementsApplicatio...

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SeekIC No. : 004326383 Detail

DGT409BCA: Features: Reverse Blocking CapabilityDouble Side CoolingHigh Reliability In ServiceHigh Voltage CapabilityFault Protection Without FusesTurn-off Capability Allows Reduction In Equipment Size And Wei...

DGT409BCA Data Sheet

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Part Number:
DGT409BCA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Reverse Blocking Capability
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements




Application

The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters (CSI). Reverse recovery ratings and characteristics are included.




Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tj = 115°C unless staed otherwise
Symbol Parameter Conditions Max. Units
VDRM Repetitive peak off-state voltage IDM = 100mA 6500 V
VRRM Repetitive peak reverse voltage IRRM = 100mA 6500 V
ITCM Repetitive peak controllable on-state current VD = 4300V, diGQ/dt = 20A/s, CS = 2.0F 1500 A
ITSM Surge (non-repetitive) on-state current 10ms half sine. 3 kA
I2t I2t for fusing 10ms half sine 45 x 103 A2s
diT/dt Critical rate of rise of on-state current VD = 3000V, IT = 800A, IFG > 20A, tr > 1.5s 300 A/s
dVD/dt Rate of rise of off-state voltage VD = 3000V, RGK 1.5 175 V/s
VD = 3000V, VRG = 2V 1000 V/s
L S Peak stray inductance in snubber circuit IT = 1500A, VDM = 6000V, dIGQ/dt = 20A/s, CS = 2F 200 nH





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