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DG612

Features: Fast Switching- tON: 12 nsLow Charge Injection:±2 pCWide Bandwidth: 500 MHz5-V CMOS Logic CompatibleLow rDS(on): 18Low Quiescent Power : 1.2 nWSingle Supply OperationApplicationFast Sample-and-HoldsSynchronous DemodulatorsPixel-Rate Video SwitchingDisk/Tape DrivesDAC DeglitchingSwitched ...

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SeekIC No. : 004326312 Detail

DG612: Features: Fast Switching- tON: 12 nsLow Charge Injection:±2 pCWide Bandwidth: 500 MHz5-V CMOS Logic CompatibleLow rDS(on): 18Low Quiescent Power : 1.2 nWSingle Supply OperationApplicationFast Sample...

DG612 Data Sheet

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Part Number:
DG612
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Fast Switching- tON: 12 ns
Low Charge Injection:±2 pC
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low rDS(on): 18
Low Quiescent Power : 1.2 nW
Single Supply Operation




Application

Fast Sample-and-Holds
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers




Pinout

Connection Diagram Connection Diagram




Specifications

V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V+ to GND . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to 0.3 V
VL to GND . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VINa . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . (V) 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VS, VDa . . . . . . . . . . . . . . .. . .. . . . ... . (V) 0.3 V to (V) + 16 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . ±30 mA
Current, S or D (Pulsed at 1 s, 10% Duty Cycle) . . . . . . . .±100 mA
Storage Temperature: CerDIP . . . . . . . . . . . . . ... . . . . . 65 to 150
Plastic . . . . . . . . . . . .. . . . . .. . . 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/ above 75
d. Derate 7.6 mW/ above 75
e. Derate 12 mW/ above 75




Description

The DG611/DG612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications.

Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/DG612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.






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