DG442B

Features:

*Low On-Resistance: 45
*Low Power Consumption: 1.0 mW
*Fast Switching Action-tON: 120 ns
*Low Charge Injection-Q: -1 pC
*TTL/CMOS-Compatible Logic
*Single Supply Capability




Application

*Audio Switching
*Data Acquisition
*Sample-and-Hold Circuits
*Communication Systems
*Automatic Test Equipment
*Medical Instruments




Pinout






Specifications

V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GNDto V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputs^a V_S, V_D . . .. . . . .. . . . . . . . .. . . . .. . . .. . . .. . .. (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) .. . . . . . . . . .. . . . . . .. . . . . .. . . . . .. . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . .. . . .. . .. . .... .. .. . . .. . . 100 mA
Storage Temperature . . . . . . . . . . . . .. . . . . . . . . .. . .. . . . . .. . .. . . .. . -65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIP^c . . . . . . . . . . .. . . . . . . . .. . . . . . . . . .. . . . . . . . . . . .. . . 470 mW
16-Pin Narrow Body SOIC^d . . . . . . . .. . . . . . . .. . .. . . . . . . . .. . . . . .. . . . . 900 mW
QFN-16^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . 850 mW
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.





Description

The DG441B/442B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG441B/442B are upgrades to the original DG441/442.


Combing low on-resistance (45 , typ.) with high speed (t_ON 120 ns, typ.), the DG441B/442B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.


The DG441B/442B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.


When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.