DG425

Features: Plug-In Upgrades for Industry-Standard DG421/DG423/DG425Improved r(DS)ON Match Between Channels (3½ max)Guaranteed rFLAT(ON) Over Signal Range (4½ max)Improved Charge Injection (15pC max)Improved Off Leakage Current Over Temperature (<5nA at +85°C)Withstands Electrostati...

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SeekIC No. : 004326256 Detail

DG425: Features: Plug-In Upgrades for Industry-Standard DG421/DG423/DG425Improved r(DS)ON Match Between Channels (3½ max)Guaranteed rFLAT(ON) Over Signal Range (4½ max)Improved Charge Injecti...

floor Price/Ceiling Price

Part Number:
DG425
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/9

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Product Details

Description



Features:

 Plug-In Upgrades for Industry-Standard DG421/DG423/DG425
 Improved r(DS)ON Match Between Channels (3½ max)
 Guaranteed rFLAT(ON) Over Signal Range (4½ max)
 Improved Charge Injection (15pC max)
 Improved Off Leakage Current Over Temperature (<5nA at +85°C)
 Withstands Electrostatic Discharge (2000V min) per Method 3015.7
 Low rDS(ON) (35½ max)
 Single-Supply Operation +10V to +30V Bipolar-Supply Operation ±4.5V to ±20V
 Low Power Consumption (35W max)
 Rail-to-Rail Signal Handling Capability
 TTL/CMOS-Logic Compatible



Application

Sample-and-Hold                            Circuits Modems
Fax Machines                                  Test Equipment
Battery-Operated Systems             PBX, PABX
Guidance and Control Systems       Military Radios
Audio Signal Routing                       Communication Systems



Pinout

  Connection Diagram


Specifications

Voltage Referenced to V-
V+ ........................................................................................... 44V
GND......................................................................................... 25V
VL ..........................................................(GND -0.3V) to (V+ +0.3V)
Digital Inputs, S, D (Note 1)...........................(V- - 2V) to (V+ + 2V)
 Peak Current, S, D.................................................................30mA
Continuous Current, S or D ....................................................20mA
Peak Current, S or D(pulsed at 1ms, 10% duty cycle max) ...100mA
Continuous Power Dissipation (TA = +70°C)
16-Pin Plastic DIP (derate 10.53mW/°C above +70°C).... .842mW
16-Pin Narrow SO (derate 8.70mW/°C above +70°C) .......696mW
20-Pin PLCC (derate 10.00mW/°C above +70°C............... 800mW
16-Pin CERDIP (derate 10.00mW/°C above +70°C) ....... . .800mW
Operating Temperature Ranges
DG42_C_ . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 0°C to +70°C
DG42_D_ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
DG42_A_ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature Ranges
DG42_C_/DG42_D_ . . . . . . . . . . . . . . . . . . . . . . .. -65°C to +125°C
DG42_A_ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . -65°C to +150°C
Lead Temperature (soldering, 10sec). . . . . . . . . .  . . . . . . . .+300°C

Note 1: Signals on S, D, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings.




Description

Maxim's redesigned DG421/DG423/DG425 monolithic analog switches now feature guaranteed on-resistance matching (3½ max) between switches and on-resistance flatness over the signal range (4½ max). These low onresistance switches (20½ typ) conduct equally well in both directions. They guarantee a low charge injection of 15pC maximum and an ESD tolerance of 2000V minimum per Method 3015.7. Off leakage current over temperature has also been reduced (less than 5nA at +85°C).

The DG421/DG423/DG425 are precision, dual CMOS switches with latchable logic inputs that simplify interfacing with microprocessors (Ps). The single-pole/singlethrow DG421 and double-pole/single-throw DG425 are normally open dual switches. The dual, singlepole/double-throw DG423 has two normally open and two normally closed switches. Fast switching times(175ns for tON and 145ns for tOFF) and low power consumption (35W max) make these parts ideal for battery-powered applications requiring P-compatible switches. Operation is from a single +10V to +30V supply, or bipolar ±4.5V to ±20V supplies. Fabricated with the same 44V silicon-gate process, these switches have rail-to-rail signal handling capabilities.




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