Features: ±15-V Analog Signal Range
On-Resistance-rDS(on): 15
Fast Switching Action-tON: 100 ns
TTL and CMOS Compatible
MSOP-8 and SOIC-8 Packaging
ApplicationPrecision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control Systems
Hard Disk Drives
Pinout
SpecificationsV- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-20 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .(GND -0.3 V) to (V+) + 0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . .. . . .(V- ) -2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . .30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . .100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .-65 to 150
Power Dissipation (Package)b
8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400 mW
8-Pin Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400 mW
8-Pin MSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .400 mW
8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .600 mW
DescriptionPrecision CMOS Analog Switches
The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix's high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table.
DG418B Data Sheet
