Features: ±15-V Analog Input Range
Low On-Resistance: 60
Fast Switching: 130 ns
Low Power Dissipation: 30 nW
CMOS Logic CompatibleApplicationPortable and Battery Powered Instrumentation
Communication Systems
Computer Peripherals
High-Speed MultiplexingPinout
SpecificationsVoltages Referenced to V-
V+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 V
GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputsa, VS , VD. . . . . . . . . . . . . . . . . . . . . . . . ......(V-) -2 V to (V+) +2V or
20 mA, whichever occurs first
Current, Any Terminal Except S or D. . . . . . . . . . . . . . . . . . . . . . . . . . . .......30 mA
Continuous Current, S or D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .......20 mA
(Pulsed at 1 ms, 10% duty cycle max). . . . . . . . . . . . . . . . . . . . . . . . . . .......70 mA
Storage Temperature (AK Suffix). . . . . . . . . . . . . . . . . . ....................-65 to 15
(CJ, DY, and DQ Suffix). . . . . . . .......................-65 to 12
Power Dissipationb
16-Pin Plastic DIPc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....470 mW
16-Pin Narrow SOIC and TSSOPe. . . . . . . . . . . . . . . . . . . . . . . . . . . ..........600 mW
16-Pin Cerdipd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....900 mW
Notes:
a. Signals on SX, DX , or INX exceeding V+ or V- will be clamped by interna diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 12 mW/ above 75
d. Derate 6.5 mW/ above 25
e. Derate 7.6 mW/ above 75
DescriptionQuad Monolithic SPST CMOS Analog Switches
Featuring low on-resistance (60 ) and fast switching (130 ns), the DG308A is supplied in the "normally open "configuration while DG309 is supplied "normally closed." Inp thresholds are high voltage CMOS compatible.
Designed with the Vishay Siliconix PLUS-40 CMOS process to combine low power dissipation with a high breakdown voltage rating of 44 V, each DG308B/309B switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latch up.
The DG308B/309B upgrades are recommended for new designs.
DG309 Data Sheet
