DG304A_MIL

Features:

±15-V Input Range
Fast Switching-t_ON: 110 ns
Low rDS(on): 30
Single Supply Operation
CMOS Logic Levels
Micropower: 30 nW

Application

Low Level Switching Circuits
Programmable Gain Amplifiers
Portable and Battery Powered Systems




Pinout






Specifications

Voltages Referenced to V
V₊ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs^a, V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . . (V) 2 V to (V₊) +2V or
30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (AAA, AAK, Suffix) . . . . . .. . . . .. . . . .. . 65 to 150
Power Dissipation^b
14-Pin CerDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
10-Pin Metal Cand . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . 450 mW
Notes:
a. Signals on S^_X, D_X, or I_NX exceeding V₊ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/above 25
d. Derate 6 mW/ above 75




Description

The DG304A_MIL through DG307A_MIL series of monolithic CMOS switches were designed for applications in communications, instrumentation and process control. This DG304A_MIL through DG307A_MIL  series is well suited for applications requiring fast switching and nearly flat on-resistance over the entire analog range.

Designed on the Vishay Siliconix PLUS-40 CMOS process to achieve low power consumption and excellent on/off switch performance, The DG304A_MIL through DG307A_MIL series of monolithic CMOS switches are ideal for battery powered applications, without sacrificing switching speed. Break-before-make switching action is guaranteed, and an epitaxial layer prevents latchup. Single supply operation (for positive switch voltages) is allowed by connecting the V rail to 0 V.