DG271MIL

Features:

 Fast Switching tON: 55 ns
 Low Charge Injection: 5 pC
 Low rDS(on): 32
 TTL/CMOS Compatible
 Low Leakage: 50 pA


Application

 High-Speed Switching
 Sample/Hold
 Digital Filters
 Op Amp Gain Switching
 Flight Control Systems
 Automatic Test Equipment
 Choppers
 Communication Systems


Pinout




Specifications

V₊ to V₋ . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V₋ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa V_S, V_D . . . (V₋) −2 V to (V₊) +2 V or 20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . .  . . . .  . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (DY Suffix) . . . . . . .  . . . .  . . . . . . . . . . . . . . . . −65 to 150
                                   (C_J Suffix) . . . . . . . . . . . .  . . . .  . . . . . . . . . . . −65 to 125
Power Dissipation (Package)^b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V₊ or V₋ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/ above 75
d. Derate 7.6 mW/ above 75


Description

The DG271 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds.

The military version of the DG271 is manufactured using the Vishay Siliconix high voltage metal gate wafer fabrication process. The military version of the DG271 shares the same performance of the commercial DG271B, which uses the high voltage silicon gate process.