DG271B

Features:

Fast Switching tON: 55 ns
Low Charge Injection: 5 pC
Low rDS(on): 32
TTL/CMOS Compatible
Low Leakage: 50 pA




Application

High-Speed Switching
Sample/Hold
Digital Filters
Op Amp Gain Switching
Flight Control Systems
Automatic Test Equipment
Choppers
Communication Systems




Pinout






Specifications

V₊ to V₋ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V₋ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa V_S, V_D .. . (V₋) −2 V to (V₊) +2 V or 20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . .. . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (DY Suffix) . . . . . . .. . . .. . . . . . . . . . . . . . . . −65 to 150
(C_J Suffix) . . . . . . . .. . . .. . . . . . . . . . . . . . . −65 to 125
Power Dissipation (Package)^b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOICd . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V₊ or V₋ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/above 75
d. Derate 7.6 mW/ above 75




Description

Hi-Speed Quad Monolithic SPST CMOS Analog Switch

The DG271B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds.

DG271B Built on the Vishay Siliconix' proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup.