DG202B

Features:

±22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance-rDS(on): 45
Low Leakage-ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching-tON: 120 ns
Low Glitching-Q: 1 pC




Application

Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits




Pinout






Specifications

Voltages Referenced to V
V₊ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V) 2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (AK, DK Suffix) . . . . . . . . . .. . . . . . . . . . . . 65 to 150
(DJ, DY, DQ Suffix) . . . . .. . . . . . .. . . . . . .. . . .. . .. . . . . . . . . . . . 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 640 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/ above 75
d. Derate 7.6 mW/ above 75
e. Derate 12 mW/ above 75




Description

Improved Quad CMOS Analog Switches

The DG201B/202B analog switches are highly improved versions of the industry-standard DG201A/202. These DG201B/202B are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption.

These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications,instrumentation, process control,computer peripherals, etc.An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle up to
22-V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup.