DG2003

Features:

 Low Voltage Operation (1.8 V to 5.5 V)
 Low On-Resistance - rDS(on): 1.2
 Fast Switching - 14 ns
 Low Charge Injection - QINJ: 1 pC
 Low Power Consumption
 TTL/CMOS Compatible
 MSOP-8 Package


Application

 Cellular Phones
 Communication Systems
 Portable Test Equipment
 Battery Operated Systems
 Sample and Hold Circuits

Pinout




Specifications

Reference to GND
V₊ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . .  .. . . . . . . . . . . . . . . . . .±200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)  . . . . . . . .. . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)_^b
MSOP-8c . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/above 25


Description

The DG2003/2004/2005 are dual single-pole/single-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, fast switching, low on-resistance (rDS(on): 1.2
) and small physical size (MSOP-8), the DG2003/2004/2005 are ideal for portable and battery powered applications requiring high performance and efficient use of board space.

The DG2003/2004/2005 are built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup.