DG186

Features:

• Constant ON-Resistance for Signals to ±10V (DG182,DG185, DG188, DG191), to ±7.5V (All Devices)
• ±15V Power Supplies
• <2nA Leakage from Signal Channel in Both ON and OFF States
• TTL, DTL, RTL Direct Drive Compatibility
• t_ON, t_OFF <150ns, Break-Before-Make Action
• Cross-Talk and Open Switch Isolation >50dB at 10MHz (75 Load)




Pinout






Specifications

V₊ - V_-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
V₊ - V_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33V
V_D - V_-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33V
V_D - V_S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . ±22V
V_L - V_- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
V_L - V_IN, V_L - GND, V_IN - GND . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
GND - V_- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V
GND - V_IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . 20V
Current (S or D) (Note 3) . . . . . . . . . . . . . . . . . . .. . . . . . . .200mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to +150
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . +300




Description

The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET) designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the ON-OFF state of each switch. The DG181 is designed to provide a turn-off speed which is faster than turn-on speed,so that break-before-make action is achieved when switching from one channel to another. In the ON state, each switch conducts current equally well in both directions. In the OFF condition, the switches will block voltages up to 20V peak-to-peak. Switch-OFF input-output isolation 50dB at 10MHz, due to the low output impedance of the FET-gate driving circuit.