Features: · High ruggedness· RDS(on) (Max 1.0 )@VGS=10V· Gate Charge (Typical 48nC)· Improved dv/dt Capability· 100% Avalanche TestedSpecifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuous Drain Current(@TC = 25°C) *...
DFF7N60: Features: · High ruggedness· RDS(on) (Max 1.0 )@VGS=10V· Gate Charge (Typical 48nC)· Improved dv/dt Capability· 100% Avalanche TestedSpecifications Symbol Parameter Value ...
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Symbol |
Parameter |
Value |
Units |
VDSS |
Drain to Source Voltage |
600 |
V |
ID |
Continuous Drain Current(@TC = 25°C) * |
7.4 |
A |
Continuous Drain Current(@TC = 100°C) * |
4.6 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
30 |
A |
VGS |
Gate to Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
560 |
mJ |
EAR |
Repetitive Avalanche Energy (Note 1) |
4.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD |
Total Power Dissipation(@TC = 25 °C) |
48 |
W |
Derating Factor above 25 °C |
0.38 |
W/°C | |
TSTG,TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
°C |
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
This N-channel (DFF7N60) enhancement mode field-effect power transistor using D& I semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and small power inverter application.