DF300R12KE3, US $ 85.5-95 , Infineon Technologies, DF300R12KE3 DataSheet download, circuit diagram from SeekIC.com

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DF300R12KE3: IGBT Transistors 1200V 300A DUAL

DF300R12KE3 Data Sheet

US $ 85.5~95 / Piece | Get Latest Price

Part Number:: DF300R12KE3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	1.7 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	300 A	Gate-Emitter Leakage Current :	400 nA
Power Dissipation :	1470 W	Maximum Operating Temperature :	+ 125 C
Package / Case :	IS5a ( 62 mm )-5

Description

Packaging :
Configuration : Single
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 1.7 V
Continuous Collector Current at 25 C : 300 A
Package / Case : IS5a ( 62 mm )-5
Power Dissipation : 1470 W

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DF300R12KE3

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