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DE375-501N21A

Features: * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * Low R * DS(on)* Very low insertion ind...

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DE375-501N21A: Features: * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability * IXYS advanced low Qg process * Low gate cha...

DE375-501N21A Data Sheet

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Part Number:
DE375-501N21A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

*  Isolated Substrate
    -  high isolation voltage (>2500V)
    -  excellent thermal transfer
    -  Increased temperature and power cycling capability  
*  IXYS advanced low Qg process
*  Low gate charge and capacitances
    -  easier to drive
    -  faster switching
*  Low R 
*  DS(on)
*  Very low insertion inductance (<2nH)
*  No beryllium oxide (BeO) or other haz- ardous materials  
 


Specifications

Symbol
Test
Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
 Tc = 25°C

Tc = 25°C, pulse width limited by TJM
25
150
A
A
IAR
 Tc = 25°C
21
A
EAR
Tc = 25°C
30
mJ
dv/dt
 IS IDM, di/dt 100A/s,VDDVDSS,
Tj 150°C, RG = 0.2
IS = 0
5

>200
V/ns

V/ns
PDC
PDHS
PDAMB
Tc = 25°C
Derate 3.7W/°C above 25°C
Tc = 25°C
940
425
4.5
W
W
W
RthJC
RthJHS
  
0.16
0.36
C/W
C/W



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