Transistors RF MOSFET Power MOSFET RF POWER
DE150-201N09A: Transistors RF MOSFET Power MOSFET RF POWER
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Features: * Isolated Substrate - high isolation voltage (>2500V) -excellent thermal transfer ...
Features: * Isolated Substrate - high isolation voltage (>2500V) -excellent thermal transfer ...
Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1 MHz to 100 MHz | Drain-Source Breakdown Voltage : | 200 V | ||
Continuous Drain Current : | 15 A | Gate-Source Breakdown Voltage : | +/- 20 V | ||
Maximum Operating Temperature : | + 125 C | Package / Case : | DE475 |