Transistors Switching (Resistor Biased) 200MW 10K
DDTD114GU-7-F: Transistors Switching (Resistor Biased) 200MW 10K
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Features: Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Bias...
Configuration : | Single | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 0 KOhms | Typical Resistor Ratio : | 0 | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-323-3 | ||
Collector- Emitter Voltage VCEO Max : | 40 V | Peak DC Collector Current : | 500 mA | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
Technical/Catalog Information | DDTD114GU-7-F |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Pre-Biased |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 200mW |
Resistor - Base (R1) (Ohms) | - |
Resistor - Emitter Base (R2) (Ohms) | 100K |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Frequency - Transition | 200MHz |
Mounting Type | Surface Mount |
Package / Case | SC-70-3, SOT-323-3 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DDTD114GU 7 F DDTD114GU7F |