DDTD113EC-7-F, US $ .06-.19 , Diodes Inc., DDTD113EC-7-F DataSheet download, circuit diagram from SeekIC.com

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DDTD113EC-7-F: Transistors Switching (Resistor Biased) 200MW 1K1K

DDTD113EC-7-F Data Sheet

US $ .06~.19 / Piece | Get Latest Price

Part Number:: DDTD113EC-7-F
Mfg:: Diodes Inc.
Supply Ability:: 5000

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Upload time: 2024/11/24

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What is this?

DDTD(LO-R1)C evaluate
Features: Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Bias...
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Features: *EpitaxialPlanar Die Construction*Complementary PNP Types Available (DDTB)*Built-In Bias...
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Transistors Switching (Resistor Biased) 200MW 1KW 1KW

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	NPN
Typical Input Resistor :	1 KOhms	Typical Resistor Ratio :	1
Mounting Style :	SMD/SMT	Package / Case :	SOT-23-3
Peak DC Collector Current :	500 mA	Maximum Operating Temperature :	+ 150 C
Packaging :	Reel

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current :
Power Dissipation :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Typical Resistor Ratio : 1
Configuration : Single
Package / Case : SOT-23-3
Peak DC Collector Current : 500 mA
Typical Input Resistor : 1 KOhms

Parameters:

Technical/Catalog Information	DDTD113EC-7-F
Vendor	Diodes Inc
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	200mW
Resistor - Base (R1) (Ohms)	1K
Resistor - Emitter Base (R2) (Ohms)	1K
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Frequency - Transition	200MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	DDTD113EC 7 F DDTD113EC7F

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DDTD113EC-7-F

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