DDB2U30N08VR, US $ 8.87-13.27 , Infineon Technologies, DDB2U30N08VR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00141329 Detail

DDB2U30N08VR: IGBT Modules N-CH 600V 25A

DDB2U30N08VR Data Sheet

US $ 8.87~13.27 / Piece | Get Latest Price

Part Number:: DDB2U30N08VR
Mfg:: Infineon Technologies
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~25
25~100

Unit Price
$13.27
$11.08
$9.98
$8.87

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/21

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Recent History
What is this?

DDB2265 Series evaluate
SpecificationsBoth P-type and N-type low barrier silicon available Low 1/f noise Bonded junctions ...
DDB2503 Series evaluate
SpecificationsBoth P-type and N-type low barrier silicon available Low 1/f noise Bonded junctions ...
DDB2504 Series evaluate
SpecificationsBoth P-type and N-type low barrier silicon available Low 1/f noise Bonded junctions ...

Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Single
Collector- Emitter Voltage VCEO Max :	600 V	Continuous Collector Current at 25 C :	25 A
Maximum Operating Temperature :	+ 125 C	Package / Case :	EASY750

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 125 C
Configuration : Single
Continuous Collector Current at 25 C : 25 A
Package / Case : EASY750

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DDB2U30N08VR

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