Transistors Bipolar (BJT) 1000W 60Vceo
DCX55-16-13: Transistors Bipolar (BJT) 1000W 60Vceo
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 63 at 5 mA at 2 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Packaging : | Reel |
Technical/Catalog Information | DCX55-16-13 |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | 200MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-89-3, TO-243-3 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DCX55 16 13 DCX551613 |