Features: *High cut-off frequencies : 3THz*High breakdown voltage : < -5V @ 20µA*Good ideality factor : 1.2*Low parasitic inductances*Low cost technologyVDimensions : 0.53 x 0.23 x 0.1mmSpecifications Symbol Parameter Typ. values Unit Vak Reverse anode-cathode voltage ...
DBES105A: Features: *High cut-off frequencies : 3THz*High breakdown voltage : < -5V @ 20µA*Good ideality factor : 1.2*Low parasitic inductances*Low cost technologyVDimensions : 0.53 x 0.23 x 0.1mmSpe...
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Symbol |
Parameter |
Typ. values |
Unit |
Vak | Reverse anode-cathode voltage | -5 | V |
Iak | Forward anode-cathode current | 10 | mA |
The DBES105A is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
DBES105A, this flip-chip dual diode has been designed for high performance mixer applications.