DA28F640J5A-150

The DA28F640J5A-150 has eleven features.(1)high-density symmetrically-Blocked Architecture.(2)4.5 V5.5 V VCC operation.(3)120 ns read access time (32 M),150 ns read access time (64 M).(4)enhanced data protection features.(5)industry-standard packaging.(6)cross-compatible command support.(7)32-Byte write buffer.(8)6,400,000 total erase cycles (64 M),3,200,000 total erase cycles (32 M).(9)automation suspend options.(10)system performance enhancements.(11)operating temperature 20 to + 85 (40 to +85 on .25 micron ETOXVI) process technology parts).

Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash® memory products provide 2Xthe bits in 1Xthe space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,support for code and data storage, and easy migration to future devices.Using the same NOR-based ETOX™ technology as Intel's one-bit-per-cell products, Intel StrataFlash memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,Intel StrataFlash components are ideal for code or data applications where high density and low cost are required. Examples include networking, telecommunications, audio recording, and digital imaging.

Intel StrataFlash memory components deliver a new generation of forward-compatible software support.By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.Manufactured on Intel's 0.4 micron ETOX™ V process technology and Intel's 0.25 micron ETOX VI process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.