Transistors Bipolar (BJT) PNP General Purpose
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 20 A | ||
DC Collector/Base Gain hfe Min : | 60 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | Value | Units |
VCEO | Collector-Emitter Voltage | 60 | V |
IC | Collector Current - Continuous | 8.0 | A |
TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
The D45H8 is one member of the D45H series.It is designed for various specific and general purpose application such as;output and driver stages of amplifiers operating at frequencies.from DC to greater than 1.OMHz; series,shunt and switching regulators; low and high frequency inverters/converters and many others.
Features of the D45H8 are:(1)NPN complement to D45H PNP; (2)very low collector saturation voltage; (3)excellent linearity; (4)fast switching; (5)PNP values are negative,observe proper polarity.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
The absolute maximum ratings of the D45H8 can be summarized as:(1)junction temperature range:-55 to 150;(2)storage junction temperature:-55 to 150;(3)total power dissipation@Tc=25:50W;(4)collector-emitter voltage Vceo:60V;(5)collector-emitter voltage Vces:60V;(6)emitter-base voltage:5V.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).
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Technical/Catalog Information | D45H8 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | D45H8 D45H8 497 2579 5 ND 49725795ND 497-2579-5 |