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D45C12

Transistors Bipolar (BJT) 4A 80V 30W PNP

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SeekIC No. : 00213559 Detail

D45C12: Transistors Bipolar (BJT) 4A 80V 30W PNP

D45C12 Data Sheet

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Part Number:
D45C12
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 40 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 40 MHz


Parameters:

Technical/Catalog InformationD45C12
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names D45C12
D45C12



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