D44H11G

Transistors Bipolar (BJT) 10A 80V 50W NPN

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SeekIC No. : 00205173 Detail

D44H11G: Transistors Bipolar (BJT) 10A 80V 50W NPN

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US $ .35~.64 / Piece | Get Latest Price
Part Number:
D44H11G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.64
  • $.51
  • $.39
  • $.35
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 50 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 10 A


Description

The D44H11G is a kind of complementary silicon power transistors and these series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

The features of D44H11G can be summarized as (1)low collector emitter saturation voltage VCE(sat) = 1.0 V (Max) @ 8.0 A; (2)fast switching speeds; (3)complementary pairs simplifies designs; (4)pb-free packages are available.

The absolute maximum ratings of D44H11G are (1)VCEO collector-emitter voltage D44H8, D45H8/D44H11, D45H11: 60/80Vdc; (2)VEB emitter base voltage: 5.0 Vdc; (3)IC collector current continuous/peak: 10/20Adc; (4)PD total power dissipation @ TC = 25°C/@ TA = 25°C: 70/2.0W; (5)operating and storage junction and temperature range TJ, Tstg: -55 to +150 °C.




Parameters:

Technical/Catalog InformationD44H11G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)10A
Power - Max70W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Frequency - Transition50MHz
Current - Collector Cutoff (Max)10A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names D44H11G
D44H11G
D44H11GOS ND
D44H11GOSND
D44H11GOS



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