D1005-BD Selling Leads, Price trend, D1005-BD DataSheet download, circuit diagram from SeekIC.com

Features: ·Ultra Wide Band Driver Amplifier·Self Bias Architecture·23.0 dB Small Signal Gain·5.0 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 270 mA Input ...

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SeekIC No. : 004321028 Detail

D1005-BD: Features: ·Ultra Wide Band Driver Amplifier·Self Bias Architecture·23.0 dB Small Signal Gain·5.0 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 M...

D1005-BD Data Sheet

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Part Number:: D1005-BD
Supply Ability:: 5000

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Upload time: 2024/5/22

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Product Details

Description

Features:

·Ultra Wide Band Driver Amplifier
·Self Bias Architecture
·23.0 dB Small Signal Gain
·5.0 dB Noise Figure
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010

Specifications

Supply Voltage (Vd)	+6.0 VDC
Supply Current (Id)	270 mA
Input Power (Pin)	+17.0 dBm
Storage Temperature (Tstg)	-65 to +165
Operating Temperature (Ta)	-55 to MTTF Table¹
Channel Temperature (Tch)	MTTF Table¹

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

Description

Mimix Broadband's 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 23.0 dB with a 5.0 dB noise figure. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The10.0-40.0 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave wideband military and fiber optic applications.

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D1005-BD

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