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D1005-BD

Features: ·Ultra Wide Band Driver Amplifier·Self Bias Architecture·23.0 dB Small Signal Gain·5.0 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 270 mA Input ...

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SeekIC No. : 004321028 Detail

D1005-BD: Features: ·Ultra Wide Band Driver Amplifier·Self Bias Architecture·23.0 dB Small Signal Gain·5.0 dB Noise Figure·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 M...

D1005-BD Data Sheet

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Part Number:
D1005-BD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Ultra Wide Band Driver Amplifier
·Self Bias Architecture
·23.0 dB Small Signal Gain
·5.0 dB Noise Figure
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010


Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 270 mA
Input Power (Pin) +17.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 23.0 dB with a 5.0 dB noise figure. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The10.0-40.0  has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave wideband military and fiber optic applications.




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