Features: ·Ultra Wide Band Driver Amplifier·Self Biased Architecture·12.0 dB Small Signal Gain·6.0 dB Noise Figure·RoHS Compliant SMD, 3x3 mm QFN Package·100% RF, DC, and Output Power TestingSpecifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 175 mA Input Power (Pin) +17....
D1004-QT: Features: ·Ultra Wide Band Driver Amplifier·Self Biased Architecture·12.0 dB Small Signal Gain·6.0 dB Noise Figure·RoHS Compliant SMD, 3x3 mm QFN Package·100% RF, DC, and Output Power TestingSpecifi...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 175 mA |
Input Power (Pin) | +17.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 12.0 dB with a 6.0 dB noise figure across much of the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The10.0-40.0 comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.