Features: ·Wide Band Driver Amplifier·9.0 dB Small Signal Gain·5.0 dB Noise Figure·15.0 dB Gain Control·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +10.0 VDC Supply Curr...
D1002-BD: Features: ·Wide Band Driver Amplifier·9.0 dB Small Signal Gain·5.0 dB Noise Figure·15.0 dB Gain Control·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Insp...
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Supply Voltage (Vd) |
+10.0 VDC |
Supply Current (Id) |
150 mA |
Gate Bias Voltage (Vg) |
+0.3 VDC |
Input Power (Pin) |
+18 dBm |
Storage Temperature (Tstg) |
-65 to +165 |
Operating Temperature (Ta) |
-55 to MTTF Table2 |
Channel Temperature (Tch) |
MTTF Table2 |
Mimix Broadband's D1002-BD 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband's D1002-BD 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. D1002-BD is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.