CZTA27

Specifications SYMBOL Units Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance JA 62.5 °C/WDescri...

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SeekIC No. : 004320829 Detail

CZTA27: Specifications SYMBOL Units Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 A Power Dissipation PD 2.0 W Operating an...

floor Price/Ceiling Price

Part Number:
CZTA27
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Specifications

  SYMBOL   Units
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 500 A
Power Dissipation PD 2.0 W
Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 62.5 °C/W



Description

The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain and high voltage.


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