CZT3019 Selling Leads, Price trend, CZT3019 DataSheet download, circuit diagram from SeekIC.com

Specifications SYMBOL Units Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Collector Current (Peak) ICM 1.5 A Power Dissipation PD 2.0 W Operating and Storage Junction...

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SeekIC No. : 004320820 Detail

CZT3019: Specifications SYMBOL Units Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Coll...

CZT3019 Data Sheet

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Part Number:: CZT3019
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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CZT3019 TR evaluate
US $.2 - .22 / Piece

Transistors Bipolar (BJT) Small Signal Transistor NPN
CZT3055 evaluate
Specifications SYMBOL Units Collector-Base Voltage VCBO 100 V Collector-Emitter...
CZT3055-TR evaluate
US $.52 - .61 / Piece

Transistors Bipolar (BJT) NPN Power

Product Details

Description

Specifications

	SYMBOL		Units
Collector-Base Voltage	V_CBO	120	V
Collector-Emitter Voltage	V_CEO	80	V
Emitter-Base Voltage	V_EBO	7.0	V
Collector Current	I_C	1.0	A
Collector Current (Peak)	I_CM	1.5	A
Power Dissipation	P_D	2.0	W
Operating and Storage Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	62.5	°C/W

Description

The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

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CZT3019

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