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Specifications SYMBOL Units Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCES 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C ...

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SeekIC No. : 004320816 Detail

CZT2000: Specifications SYMBOL Units Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCES 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 A Power...

CZT2000 Data Sheet

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Part Number:: CZT2000
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Specifications SYMBOL Units Collector-Base Voltage VCBO 60 V Collector-Emitter ...

Product Details

Description

Specifications

	SYMBOL		Units
Collector-Base Voltage	V_CBO	200
Collector-Emitter Voltage	V_CES	200	V
Emitter-Base Voltage	V_EBO	10	V
Collector Current	I_C	600	A
Power Dissipation	P_D	2.0	W
Operating and Storage Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	62.5	°C/W

Description

The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability.

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CZT2000

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