Features: • High-density 8-/16-megabit SRAM modules• High-speed CMOS SRAMs -Access time of 70 ns• Low active power -605 mW (max.), 2M x 8• Double-sided SMD technology• TTL-compatible inputs and outputs• Small footprint SIP -PCB layout area of 0.72 sq. in.•...
CYM1471: Features: • High-density 8-/16-megabit SRAM modules• High-speed CMOS SRAMs -Access time of 70 ns• Low active power -605 mW (max.), 2M x 8• Double-sided SMD technology• ...
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The CYM1471 and CYM1481 are high-performance 8-megabit and 16-megabit static RAM modules organized as 1024K words (1471) or 2048K words (1481) by 8 bits. The CYM1471 and CYM1481 are constructed from eight (1471) or sixteen (1481) 128K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with pins. On-board decoding selects one of the SRAMs from the high-order address lines, keeping the remaining devices in standby mode for minimum power consumption.
An active LOW write enable signal (WE) controls the writing/ reading operation of the memory. When MS and WE inputs are both LOW, data on the eight data input/output pins is written into the memory location specified on the address pins.
Reading the CYM1471 or CYM1481 is accomplished by selecting the device and enabling the outputs MS and OE active LOW while WE remains inactive or HIGH. Under these conditions, the content of the location addressed by the information on the address pins is present on the eight data input/output pins.
The input/output pins of the CYM1471 and CYM1481 remain in a high-impedance state unless the CYM1471 or CYM1481 is selected, outputs are enabled, and write enable (WE) is HIGH.