CYDM256A16

Features: • True dual-ported memory cells which allow simultaneous access of the same memory location• 4/8/16K * 16 and 8/16K x 8 organization• High-speed access: 35 ns• Ultra Low operating power - Active: ICC = 15 mA (typical) at 55 ns - Active: ICC = 25 mA (typical) at 35...

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SeekIC No. : 004320602 Detail

CYDM256A16: Features: • True dual-ported memory cells which allow simultaneous access of the same memory location• 4/8/16K * 16 and 8/16K x 8 organization• High-speed access: 35 ns• Ultr...

floor Price/Ceiling Price

Part Number:
CYDM256A16
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• True dual-ported memory cells which allow simultaneous access of the same memory location
• 4/8/16K * 16 and 8/16K x 8 organization
• High-speed access: 35 ns
• Ultra Low operating power
   - Active: ICC = 15 mA (typical) at 55 ns
   - Active: ICC = 25 mA (typical) at 35 ns
   - Standby: ISB3 = 2 A (typical)
• Small footprint: Available in a 6x6 mm 100-pin Lead(Pb)-free fBGA
• Supports 1.8V, 2.5V, and 3.0V I/Os
• Full asynchronous operation
• Automatic power-down
• Pin select for Master or Slave
• Expandable data bus to 32 bits with Master/Slave chip select when using more than one device
• On-chip arbitration logic
• Semaphores included to permit software handshaking between ports
• Input Read Registers and Output Drive Registers
• INT flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Industrial temperature ranges




Specifications

Storage Temperature ..................65°C to +150°C
Ambient Temperature with
Power Applied......................55°C to +125°C
Supply Voltage to Ground Potential.............0.5V to +3.3V
DC Voltage Applied to
Outputs in High-Z State  ................0.5V to VCC + 0.5V
DC Input Voltage[29]   .................0.5V to VCC + 0.5V
Output Current into Outputs (LOW)  ................. 90 mA
Static Discharge Voltage ...................... > 2000V
Latch-up Current  ......................... > 200 mA



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