CY9C62256

• 100% form, fit, function-compatible with 32K * 8 micropower SRAM (CY62256)
  - Fast Read and Write access: 70 ns
  - Voltage range: 4.5V5.5V operation
  - Low power: 330 mW Active; 495 µW standby
  - Easy memory expansion with CE and OE features
  - TTL-compatible inputs and outputs
  - Automatic power-down when deselected
• Replaces 32K * 8 Battery Backed (BB)SRAM, SRAM, EEPROM, FeRAM or Flash memory
• Data is automatically Write protected during power loss
• Write Cycles Endurance: > 10¹⁵ cycles
• Data Retention: > 10 Years
• Shielded from external magnetic fields
• Extra 64 Bytes for device identification and tracking
• Temperature ranges
  - Commercial: 0°C to 70°C
  - Industrial: 40°C to 85°C
• JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC, and 28-pin TSOP-1 packages. Also available in 450 milwide (300-mil body width) 28-pin narrow SOIC.

The CY9C62256 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a fast read and write RAM. The CY9C62256  provides data retention for more than ten years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM.The CY9C62256's fast writes and high write cycle endurance makes it superior to other types of nonvolatile memory.

The CY9C62256 operates very similarly to SRAM devices. Memory read and write cycles require equal times. The MRAM memory is nonvolatile due to its unique magnetic process. Unlike BBSRAM, the CY9C62256 is truly a monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.

These capabilities make the CY9C62256 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment.

The CY9C62256 is offered in both commercial and industrial temperature ranges.