CY7C456

Features: • High-speed, low-power, first-in first-out (FIFO) memories• 512 x 18 (CY7C455)• 1,024 x 18 (CY7C456)• 2,048 x 18 (CY7C457)• 0.65 micron CMOS for optimum speed/power• High-speed 83-MHz operation (12 ns read/write cycle time)• Low power - ICC=90 m...

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SeekIC No. : 004320442 Detail

CY7C456: Features: • High-speed, low-power, first-in first-out (FIFO) memories• 512 x 18 (CY7C455)• 1,024 x 18 (CY7C456)• 2,048 x 18 (CY7C457)• 0.65 micron CMOS for optimum spee...

floor Price/Ceiling Price

Part Number:
CY7C456
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• High-speed, low-power, first-in first-out (FIFO) memories
• 512 x 18 (CY7C455)
• 1,024 x 18 (CY7C456)
• 2,048 x 18 (CY7C457)
• 0.65 micron CMOS for optimum speed/power
• High-speed 83-MHz operation (12 ns read/write cycle time)
• Low power - ICC=90 mA
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, Half Full, and programmable Almost Empty and Almost Full status flags
• TTL compatible
• Retransmit function
• Parity generation/checking
• Output Enable (OE) pins
• Independent read and write enable pins
• Center power and ground pins for reduced noise
• Supports free-running 50% duty cycle clock inputs
• Width Expansion Capability
• Depth Expansion Capability
• 52-pin PLCC and 52-pin PQFP



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................65°C to +150°C
Ambient Temperature with
Power Applied............................................55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA



Description

The CY7C455, CY7C456, and CY7C457 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. The CY7C455, CY7C456, and CY7C457  are 18 bits wide. The CY7C455 has a 512-word memory array, the CY7C456 has a 1,024-word memory array, and the CY7C457 has a 2,048-word memory array. The CY7C455, CY7C456, and CY7C457 can be cascaded to increase FIFO depth. Programmable features include Almost Full/Empty flags and generation/checking of parity. The CY7C455, CY7C456, and CY7C457 provide solutions for a wide variety of data buffering needs, including high-speed data acquisition, multiprocessor interfaces, and communications buffering.
The CY7C455, CY7C456, and CY7C457  have 18-bit input and output ports that are controlled by separate clock and enable signals. The input port is controlled by a free-running clock (CKW) and a write enable pin (ENW).




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