Features: • High-speed, low-power, first-in first-out (FIFO) memories• 512 x 18 (CY7C455)• 1,024 x 18 (CY7C456)• 2,048 x 18 (CY7C457)• 0.65 micron CMOS for optimum speed/power• High-speed 83-MHz operation (12 ns read/write cycle time)• Low power - ICC=90 m...
CY7C456: Features: • High-speed, low-power, first-in first-out (FIFO) memories• 512 x 18 (CY7C455)• 1,024 x 18 (CY7C456)• 2,048 x 18 (CY7C457)• 0.65 micron CMOS for optimum spee...
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The CY7C455, CY7C456, and CY7C457 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. The CY7C455, CY7C456, and CY7C457 are 18 bits wide. The CY7C455 has a 512-word memory array, the CY7C456 has a 1,024-word memory array, and the CY7C457 has a 2,048-word memory array. The CY7C455, CY7C456, and CY7C457 can be cascaded to increase FIFO depth. Programmable features include Almost Full/Empty flags and generation/checking of parity. The CY7C455, CY7C456, and CY7C457 provide solutions for a wide variety of data buffering needs, including high-speed data acquisition, multiprocessor interfaces, and communications buffering.
The CY7C455, CY7C456, and CY7C457 have 18-bit input and output ports that are controlled by separate clock and enable signals. The input port is controlled by a free-running clock (CKW) and a write enable pin (ENW).