Features: 3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirec- tional *36, and two unidirectional *18)1K *36/*18*2 (CY7C43646AV) 4K *36/*18*2 (CY7C43666AV) 16K *36/*18*2 (CY7C43686AV)0.25-micron CMOS for optimum speed/powerHigh-speed 133-MHz op...
CY7C43686AV: Features: 3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirec- tional *36, and two unidirectional *18)1K *36/*18*2 (CY7C43646AV) 4K *36/*18*2 (C...
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Storage Temperature ............................65°C to +150°C
Ambient Temperature with
Power Applied........................................55°C to +125°C
Supply Voltage to Ground Potential..............0.5V to +7.0V
DC Voltage Applied to Outputs[12]
in High-Z State ......................................0.5V to VCC +0.5V
DC Input Voltage [12] ...........................0.5V to VCC +0.5V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA