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CY7C43682

Features: •High-speed, low-power, bidirectional, First-In, First-Out (FIFO) memories•1Kx36x2 (CY7C43642)•4Kx36x2 (CY7C43662)•16Kx36x2 (CY7C43682)•0.35-micron CMOS for optimum speed/power•High speed 133-MHz operation (7.5-ns read/write cycle times)•Low powe...

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SeekIC No. : 004320419 Detail

CY7C43682: Features: •High-speed, low-power, bidirectional, First-In, First-Out (FIFO) memories•1Kx36x2 (CY7C43642)•4Kx36x2 (CY7C43662)•16Kx36x2 (CY7C43682)•0.35-micron CMOS for o...

CY7C43682 Data Sheet

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Part Number:
CY7C43682
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•High-speed, low-power, bidirectional, First-In, First-Out  (FIFO) memories
•1Kx36x2 (CY7C43642)
•4Kx36x2 (CY7C43662)
•16Kx36x2 (CY7C43682)
•0.35-micron CMOS for optimum speed/power
•High speed 133-MHz operation (7.5-ns read/write cycle  times)
•Low power -I CC= 100 mA -I SB = 10 mA
•Fully asynchronous and simultaneous read and write  operation permitted
•Mailbox bypass register for each FIFO
•Parallel Programmable Almost Full and Almost Empty  flags
•Retransmit function
•Standard or FWFT mode user selectable
•120-pin TQFP packaging
•Easily expandable in width and depth


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ............................................................................. 65° C to +150°C
Ambient Temperature withPower Applied................................................ 55°C to +125°C
Supply Voltage to Ground Potential..................................................................0.5V to +7.0V
DC Voltage Applied to Outputsin High-Z State[12]....................................0.5V to VCC +0.5V
DC Input Voltage [12] .............................................................................. 0.5V to VCC+0.5V
Output Current into Outputs (LOW).................................................................................20 mA
Static Discharge Voltage...............................................................................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..........................................................................................................> 200mA


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