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CY7C43666AV

Features: 3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirec- tional *36, and two unidirectional *18)1K *36/*18*2 (CY7C43646AV) 4K *36/*18*2 (CY7C43666AV) 16K *36/*18*2 (CY7C43686AV)0.25-micron CMOS for optimum speed/powerHigh-speed 133-MHz op...

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SeekIC No. : 004320418 Detail

CY7C43666AV: Features: 3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirec- tional *36, and two unidirectional *18)1K *36/*18*2 (CY7C43646AV) 4K *36/*18*2 (C...

CY7C43666AV Data Sheet

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Part Number:
CY7C43666AV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 3.3V high-speed, low-power, First-In First-Out (FIFO)
    memories with three independent ports (one bidirec-
    tional *36, and two unidirectional *18)
1K *36/*18*2 (CY7C43646AV)
4K *36/*18*2 (CY7C43666AV)
16K *36/*18*2 (CY7C43686AV)
0.25-micron CMOS for optimum speed/power
High-speed 133-MHz operation (7.5-ns Read/Write
   cycle times)
Low power
    -ICC = 60 mA
    -ISB = 10 mA


Pinout

Connection Diagram


Specifications

Storage Temperature ............................65°C to +150°C
Ambient Temperature with
Power Applied........................................55°C to +125°C
Supply Voltage to Ground Potential..............0.5V to +7.0V
DC Voltage Applied to Outputs[12]
in High-Z State ......................................0.5V to VCC +0.5V


DC Input Voltage [12]  ...........................0.5V to VCC +0.5V

Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA




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