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CY7C43666

Features: • High-speed, low-power, first-in first-out (FIFO) memories w/ three independent ports (one bidirectional x36, and two unidirectional x18)• 256 x36/x18x2 (CY7C43626)• 512 x36/x18x2 (CY7C43636)• 1K x36/x18x2 (CY7C43646)• 4K x36/x18x2 (CY7C43666)• 16K x3...

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SeekIC No. : 004320417 Detail

CY7C43666: Features: • High-speed, low-power, first-in first-out (FIFO) memories w/ three independent ports (one bidirectional x36, and two unidirectional x18)• 256 x36/x18x2 (CY7C43626)• 512...

CY7C43666 Data Sheet

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Part Number:
CY7C43666
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• High-speed, low-power, first-in first-out (FIFO) memories w/ three independent ports (one bidirectional x36, and two unidirectional x18)
• 256 x36/x18x2 (CY7C43626)
• 512 x36/x18x2 (CY7C43636)
• 1K x36/x18x2 (CY7C43646)
• 4K x36/x18x2 (CY7C43666)
• 16K x36/x18x2 (CY7C43686)
• 0.35-micron CMOS for optimum speed/power
• High speed 133-MHz operation (7.5-ns read/write cycle times)
• Low power
   -ICC= 100 mA
   -ISB= 10 mA
• Fully asynchronous and simultaneous read and write operation permitted
• Mailbox bypass register for each FIFO
• Parallel and Serial Programmable Almost Full and Almost Empty flags
• Retransmit function
• Standard or FWFT mode user selectable
• Partial Reset
• Big or Little Endian format for word or byte bus sizes
• 128-pin TQFP packaging
• Pin-compatible, feature enhanced, density upgrade to IDT723626/36/46 family
• Easily expandable in width and depth


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ....................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................... −55°C to +125°C
Supply Voltage to Ground Potential..................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ..........................................−0.5V to VCC+0.5V
DC Input Voltage[2].......................................−0.5V to VCC+0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ...................................................... >200mA


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