CY7C292A

The CY7C291A, CY7C292A, and CY7C293A are high-perfor-mance 2K-word by 8-bit CMOS PROMs. The CY7C291A, CY7C292A, and CY7C293A  are functionally identical, but are packaged in 300-mil (7C291A, 7C293A) and 600-mil wide plastic and hermetic DIP packages (7C292A).The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselect-ed. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells of CY7C291A, CY7C292A, and CY7C293A uti- lize proven EPROM floating-gate technology and byte-wide in-telligent programming algorithms.

The CY7C291A, CY7C292A, and CY7C293A are plug-in re-placements for bipolar devices and offer the  advantages of lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory loca-tion to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after cus-tomer programming the product will meet DC and AC specifi-cation limits.

A reading of CY7C291A, CY7C292A, and CY7C293A are accomplished by placing an active LOW signal on CS1, and active HIGH signals on CS2 and CS3. The contents of the memory location addressed by the address line (A0 −A10) will become available on the output lines (O0 − O7).