Features: • Pin- and function-compatible with CY7C199C• High speed- tAA = 10 ns• Low active power- ICC = 80 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• 2.0V Data Retention• Automatic power-down when deselected• CMOS for optimum speed/power• TTL-...
CY7C199D: Features: • Pin- and function-compatible with CY7C199C• High speed- tAA = 10 ns• Low active power- ICC = 80 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• 2.0V Data R...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE) and tri-state drivers. The CY7C199D has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins of CY7C199D (IO0 through IO7) are placed in a high-impedance state when:
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• When the write operation is active(CE LOW and WE LOW)
Write to the CY7C199D by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A14).
Read from the CY7C199D by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins.