CY7C199D

Features: • Pin- and function-compatible with CY7C199C• High speed- tAA = 10 ns• Low active power- ICC = 80 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• 2.0V Data Retention• Automatic power-down when deselected• CMOS for optimum speed/power• TTL-...

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CY7C199D Picture
SeekIC No. : 004320270 Detail

CY7C199D: Features: • Pin- and function-compatible with CY7C199C• High speed- tAA = 10 ns• Low active power- ICC = 80 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• 2.0V Data R...

floor Price/Ceiling Price

Part Number:
CY7C199D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Pin- and function-compatible with CY7C199C
• High speed
- tAA = 10 ns
• Low active power
- ICC = 80 mA @ 10 ns
• Low CMOS standby power
- ISB2 = 3 mA
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Pb-free 28-pin 300-Mil wide Molded SOJ and
  28-pin TSOP I packages



Pinout

  Connection Diagram


Specifications

Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ..................................65°C to +150°C
Ambient Temperature with
Power Applied..............................................55°C to +125°C
Supply Voltage on VCC to Relative GND [2] ... 0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [2] ...................................0.5V to VCC + 0.5V
DC Input Voltage [2] .............................. 0.5V to VCC + 0.5V
Output Current into Outputs (LOW).............................. 20 mA
Static Discharge Voltage............................................ > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA



Description

The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE) and tri-state drivers. The CY7C199D has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins of CY7C199D (IO0 through IO7) are placed in a high-impedance state when:
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• When the write operation is active(CE LOW and WE LOW)

Write to the CY7C199D by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A14).

Read from the CY7C199D by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins.




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