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CY7C199CN

Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed and power• TTL-compatible inputs and outputs• 2.0V data retention• Low CMOS standby power• Automated power down when deselec...

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SeekIC No. : 004320269 Detail

CY7C199CN: Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed and power• TTL-compatible inputs and outpu...

CY7C199CN Data Sheet

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Part Number:
CY7C199CN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed and power
• TTL-compatible inputs and outputs
• 2.0V data retention
• Low CMOS standby power
• Automated power down when deselected
• Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and 28-pin DIP packages


Pinout

Connection Diagram Connection Diagram


Specifications

Parameter Description Value Unit
TSTG Storage Temperature 65 to +150
TAMB Ambient Temperature with Power Applied (that is, case temperature) 55 to +125
VCC Core Supply Voltage Relative to VSS 0.5 to +7.0 V
VIN, VOUT DC Voltage Applied to Any Pin Relative to VSS 0.5 to VCC + 0.5 V
IOUT Output Short-Circuit Current 20 mA
VESD Static Discharge Voltage (in accordance with MIL-STD-883, Method 3015) > 2001 V
ILU Latch-up Current > 200 mA



Description

The CY7C199CN is a high performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. The CY7C199CN features an automatic power down feature that reduces power consumption when deselected.

See the "Truth Table" on page 3 in this data sheet for a complete description of read and write modes.

The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and 28-pin DIP package(s).




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