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CY7C199C

Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTLcompatible Inputs and Outputs• Available in 28 DIP, 28 SOJ, and 28 TSOP I packages• Also available in Lead-Free 28 DIP&#...

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SeekIC No. : 004320267 Detail

CY7C199C: Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTLcompatible Inputs and Outputs...

CY7C199C Data Sheet

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Part Number:
CY7C199C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTLcompatible Inputs and Outputs
• Available in 28 DIP, 28 SOJ, and 28 TSOP I packages
• Also available in Lead-Free 28 DIP
• 2.0V Data Retention
• Low CMOS standby power
• Automated Power-down when deselected


Pinout

Connection Diagram


Specifications

Parameter
Description
Value
Unit
TSTG
 Storage Temperature
65 to +150
°C
TAMB
 Ambient Temperature with Power Applied (i.e., case temperature)
55 to +125
°C
VCC
 Core Supply Voltage Relative to VSS
0.5 to +7.0
V
VIN, VOUT
 DC Voltage Applied to any Pin Relative to VSS
0.5 to VCC + 0.5
V
IOUT
 Output Short-Circuit Current
20
mA
VESD
 Static Discharge Voltage (per MIL-STD-883, Method 3015)
> 2001
V
ILU
 Latch-up Current
> 200
mA



Description

The CY7C199C is a high-performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. TheCY7C199C features an automatic power-down feature that significantly reduces power consumption when deselected.

See the Truth Table in this data sheet for a complete description of read and write modes.

The CY7C199C is available in 28 DIP, 28 SOJ, and 28 TSOP I package(s).




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