Features: • High speed- 25 ns• CMOS for optimum speed/power• Low active power- 880 mW• Low standby power- 220 mW• TTL-compatible inputs and outputs• Automatic power-down when deselectedPinoutSpecifications(Above which the useful life may be impaired. For user gu...
CY7C197N: Features: • High speed- 25 ns• CMOS for optimum speed/power• Low active power- 880 mW• Low standby power- 220 mW• TTL-compatible inputs and outputs• Automatic pow...
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The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197N has an automatic power-down feature, reducing the power consumption by 75% when deselected.
Writing to the CY7C197N is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17).
Reading the CY7C197N is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin.
The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW.The CY7C197N utilizes a die coat to insure alpha immunity.