Features: • Pin- and function-compatible with CY7C197B• High speed- tAA = 10 ns• CMOS for optimum speed/power• Low active power- ICC = 60 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• TTL-compatible inputs and outputs• Data retention at 2.0V• Auto...
CY7C197D: Features: • Pin- and function-compatible with CY7C197B• High speed- tAA = 10 ns• CMOS for optimum speed/power• Low active power- ICC = 60 mA @ 10 ns• Low CMOS standby p...
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The CY7C197D is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197D has an automatic power-down feature, reducing the power consumption when deselected.
Writing to the CY7C197D is accomplished when the Chip Enable(CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17).
Reading the CY7C197D is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin.
The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW.The CY7C197D is available in standard 24-Lead DIP and SOJ Pb-Free Packages.