Features: • Fast access time: 12 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed and power• TTL compatible inputs and outputs• Available in 24-lead DIP and 24-lead SOJPinoutSpecificationsExceeding the maximum rating may impair the useful life...
CY7C197BN: Features: • Fast access time: 12 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed and power• TTL compatible inputs and outputs• Available in 24...
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The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K * 1 bits that supports an asynchronous memory interface. The CY7C197BN features an automatic power down feature that significantly reduces power consumption when deselected.
See the "Truth Table" on page 7 for a complete description of Read and Write modes.
The CY7C197BN is available in 24-lead DIP and 24-lead SOJ package(s).