CY7C197

Features:

• High speed
   -12 ns
• CMOS for optimum speed/power
• Low active power
   -880 mW
• Low standby power
   -220 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected


Pinout

R


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)

Storage Temperature  .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).................................................  −0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1].......................................   −0.5V to VCC + 0.5V
DC Input Voltage[1]....................................  −0.5V to VCC + 0.5V
Output Current into Outputs (LOW).............................       20 mA
Static Discharge Voltage ..........................................        >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ....................................................       >200 mA


Description

The CY7C197 is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (,CE) and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected.

Writing to the CY7C197 is accomplished when the Chip Enable (,CE) and Write Enable (,WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17).

Reading the  CY7C197 is accomplished by taking chip enable (,CE) LOW while Write Enable (,WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin. The output pin stays in a high-impedance state when Chip Enable (,CE) is HIGH or Write Enable (,WE) is LOW.

The CY7C197 utilizes a die coat to insure alpha immunity.