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CY7C194B

Features: • Fast access time: 12 ns, 15 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTL-compatible inputs and outputs• Available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJPinoutSpecifications Parameter Description Valu...

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SeekIC No. : 004320254 Detail

CY7C194B: Features: • Fast access time: 12 ns, 15 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTL-compatible inputs and outputs• A...

CY7C194B Data Sheet

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Part Number:
CY7C194B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast access time: 12 ns, 15 ns, and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ


Pinout

Connection Diagram


Specifications

Parameter Description Value Unit
TSTG Storage Temperature 65 to +150 °C
TAMB Ambient Temperature with Power Applied (i.e. case temperature 55 to +125 °C
VCC Core Supply Voltage Relative to VSS 0.5 to +7.0 V
VCC DC Voltage Applied to any Pin Relative to VS 0.5 to VCC + null V
IOUT Output Short-Circuit Current 20 mA
VESD Static Discharge Voltage (per MIL-STD-883, Method 3015) > 2001 V
ILU Latch-up Current > 200 mA



Description

The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The CY7C194B-CY7C195B's features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is supported only in CY7C195B.2

See the Truth Table in this data sheet for a complete description of read and write modes.

The CY7C194B-CY7C195B is available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ package(s).




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