Features: High speed -20 nsLow active power -605 mWLow standby power -110 mWCMOS for optimum speed/powerEasy memory expansion with CE1, CE2, and OE featuresTTL-compatible inputs and outputsAutomatic power-down when deselectedPinoutSpecificationsStorage Temperature ...................................
CY7C186: Features: High speed -20 nsLow active power -605 mWLow standby power -110 mWCMOS for optimum speed/powerEasy memory expansion with CE1, CE2, and OE featuresTTL-compatible inputs and outputsAutomati...
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The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion isprovided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80% when deselected. The CY7C186 is in a 600-mil-wide PDIP package and a 32-pin TSOP (std. pinout).
An active LOW write enable signal (WE) of CY7C186 controls the writing/ reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the CY7C186 is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The input/output pins of CY7C186 remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha immunity.