Features: • Automatic power-down when deselected• CMOS for optimum speed/power• High speed -15 ns• Low active power -495 mW• Low standby power -220 mW• TTL-compatible inputs and outputs• Capable of withstanding greater than 2001V electrostatic discharge...
CY7C167A: Features: • Automatic power-down when deselected• CMOS for optimum speed/power• High speed -15 ns• Low active power -495 mW• Low standby power -220 mW• TTL-compat...
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The CY7C167A is a high-performance CMOS static RAM organized as 16,384 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C167A has an automatic power-down feature, reducing the power consumption by 67% when deselected.
Writing to the CY7C167A is accomplished when the Chip Select (CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DI) is written into the memory location specified on the address pins (A0 through A13).
Reading the CY7C167A is accomplished by taking the Chip Enable (CE) LOW, while (WE) remains HIGH. Under these conditions, the contents of the location specified on the address pins will appear on the data output (DO) pin.
The output pin of CY7C167A remains in a high-impedance state when Chip Enable is HIGH, or Write Enable (WE) is LOW.
A die coat is used to insure alpha immunity.